Mosfet 100v 100a



Type Designator: BUK453-100A

Buy BUK7240-100A,118 - Nexperia - MOSFET, AEC-Q101, N-CH, 100V, TO-252. Newark offers fast quotes, same day shipping, fast delivery, wide inventory, datasheets & technical support. HEXFET® Power MOSFET 07/23/10 Parameter Max. Qrr Reverse Recovery Charge ––– 929 1394 nC di/dt = 100A/µs. VDS= 100V VDS= 160V 0.1 1 10 100. Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80V and 100V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. Review of XY-GMOS 10A MOSFET Motor driver and HIGH LOW trigger stwich Module Review of IC Station XH-M407 8A DC Buck Converter 1.25V-36V DC CC 9A 280W Step Down Buck Converter 7-40V To 1.2-35V XL4016 Module. Shop powered by PrestaShop.

Type of Transistor: MOSFET

Fine hvac 14 ng serial. Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 140 pF

Power Mosfet 100v 100a

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: TO220AB

BUK453-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUK453-100A Datasheet (PDF)

0.1. buk453-100a-b 2.pdf Size:57K _philips

Mosfet 100v 100a

Philips Semiconductors Product Specification PowerMOS transistor BUK453-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK453 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain current (DC) 14 13 A(SMPS),

4.1. buk453-100.pdf Size:228K _inchange_semiconductor

isc N-Channel MOSFET Transistor BUK453-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMU

7.1. buk453-60a-b.pdf Size:54K _philips

Philips Semiconductors Product Specification PowerMOS transistor BUK453-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK453 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 22 20 A(SMPS), motor

7.2. buk453-60a-b 1.pdf Size:54K _philips

Philips Semiconductors Product Specification PowerMOS transistor BUK453-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK453 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 22 20 A(SMPS), motor

7.3. buk453-60.pdf Size:229K _inchange_semiconductor

isc N-Channel MOSFET Transistor BUK453-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMUM

100v 100a Mosfet

Datasheet: BUK438W-800B, BUK444-800A, BUK444-800B, BUK445-200A, BUK446-1000B, BUK446-800A, BUK446-800B, BUK452-100A, IRF630, BUK454-800A, BUK454-800B, BUK455-100A, BUK455-200A, BUK456-1000B, BUK456-100A, BUK456-200A, BUK456-200B.


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P Channel Mosfet 100v 100a